发明授权
US07110278B2 Crosspoint memory array utilizing one time programmable antifuse cells
有权
交叉点存储阵列利用一次可编程反熔丝电池
- 专利标题: Crosspoint memory array utilizing one time programmable antifuse cells
- 专利标题(中): 交叉点存储阵列利用一次可编程反熔丝电池
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申请号: US10954537申请日: 2004-09-29
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公开(公告)号: US07110278B2公开(公告)日: 2006-09-19
- 发明人: Ali Keshavarzi , Fabrice Paillet , Muhammad M. Khellah , Dinesh Somasekhar , Yibin Ye , Stephen H. Tang , Mohsen Alavi , Vivek K. De
- 申请人: Ali Keshavarzi , Fabrice Paillet , Muhammad M. Khellah , Dinesh Somasekhar , Yibin Ye , Stephen H. Tang , Mohsen Alavi , Vivek K. De
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Schwabe, Williamson & Wyatt, P.C.
- 主分类号: G11C17/08
- IPC分类号: G11C17/08
摘要:
Crosspoint memory arrays utilizing one time programmable antifuse cells are disclosed.