- 专利标题： Thin film transistor, liquid crystal display and manufacturing method thereof
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申请号： US09902170申请日： 2001-07-11
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公开(公告)号： US07112500B2公开(公告)日： 2006-09-26
- 发明人: Masahiko Ando , Masahiro Kawasaki , Masatoshi Wakagi
- 申请人： Masahiko Ando , Masahiro Kawasaki , Masatoshi Wakagi
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Dickstein Shapiro LLP
- 优先权： JP2001-042168 20010219
- 主分类号： H01L21/331
- IPC分类号： H01L21/331
摘要：
The present invention provides a thin film transistor comprising a drain electrode and a source electrode separated by a channel region formed over a contact portion with an amorphous silicon layer and wherein an impurity from the channel region is removed and a remaining impurity is diffused into the contact portion to form a contact layer wherein the contact layer has a second resistance at least lower than the first resistance.
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