发明授权
- 专利标题: Vacuum processing apparatus and vacuum processing method
- 专利标题(中): 真空加工设备和真空加工方法
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申请号: US10875231申请日: 2004-06-25
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公开(公告)号: US07112805B2公开(公告)日: 2006-09-26
- 发明人: Yoshitaka Kai , Kenichi Kuwabara , Takeo Uchino , Yasuhiro Nishimori , Takeshi Oono , Takeshi Shimada
- 申请人: Yoshitaka Kai , Kenichi Kuwabara , Takeo Uchino , Yasuhiro Nishimori , Takeshi Oono , Takeshi Shimada
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout and Kraus, LLP
- 优先权: JP2004-097773 20040330
- 主分类号: G01F23/00
- IPC分类号: G01F23/00 ; G01K5/08
摘要:
The invention provides a semiconductor fabrication apparatus capable of preventing increase of carriage time of samples, deterioration of sample output, increase of footprint and increase of investment costs. The vacuum processing apparatus comprises a plurality of vacuum processing chambers for subjecting a sample to vacuum processing; a vacuum carriage for carrying the sample into and out of the vacuum processing chamber; a switchable chamber capable of being switched between atmosphere and vacuum for carrying the sample into and out of the vacuum processing chamber; a cassette support for supporting a plurality of cassettes and a controller for controlling carrying of the sample from a cassette through the switchable chambers, the vacuum carriage means into and out of the vacuum processing chamber. The vacuum processing chamber is equipped with an etching chamber and a critical dimension measurement chamber for critical dimension inspection of the sample.
公开/授权文献
- US20050218337A1 Vacuum processing apparatus and vacuum processing method 公开/授权日:2005-10-06