Invention Grant
US07112839B2 Semiconductor device with transistor and capacitor and its manufacture method
有权
具有晶体管和电容器的半导体器件及其制造方法
- Patent Title: Semiconductor device with transistor and capacitor and its manufacture method
- Patent Title (中): 具有晶体管和电容器的半导体器件及其制造方法
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Application No.: US10845153Application Date: 2004-05-14
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Publication No.: US07112839B2Publication Date: 2006-09-26
- Inventor: Jun Lin , Toshiya Suzuki , Katsuhiko Hieda
- Applicant: Jun Lin , Toshiya Suzuki , Katsuhiko Hieda
- Applicant Address: JP Kawasaki JP Tokyo
- Assignee: Fujitsu Limited,Kabushiki Kaisha Toshiba
- Current Assignee: Fujitsu Limited,Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Kawasaki JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP.
- Priority: JP2002-211020 20020719
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
On a semiconductor substrate, a transistor and a capacitor electrically connected to the transistor are formed, the capacitor having two electrodes made of metal and a capacitor dielectric layer between the two electrodes made of oxide dielectric material. A temporary protective film is formed over the capacitor, the temporary protective film covering the capacitor. The semiconductor substrate with the temporary protective film is subjected to a heat treatment in a reducing atmosphere. The temporary protective film is removed. The semiconductor substrate with the temporary protective film removed is subjected to a heat treatment in an inert gas atmosphere or in a vacuum state. A protective film is formed over the capacitor, the protective film covering the capacitor. With these processes, leak current of the capacitor can be reduced.
Public/Granted literature
- US20040262663A1 Semiconductor device with transistor and capacitor and its manufacture method Public/Granted day:2004-12-30
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