Invention Grant
US07115306B2 Method of horizontally growing carbon nanotubes and device having the same 有权
水平生长碳纳米管的方法及其装置

Method of horizontally growing carbon nanotubes and device having the same
Abstract:
Provided are a method of growing carbon nanotubes and a carbon nanotube device. The method includes: depositing an aluminum layer on a substrate; forming an insulating layer over the substrate to cover the aluminum layer; patterning the insulating layer and the aluminum layer on the substrate to expose a side of the aluminum layer; forming a plurality of holes in the exposed side of the aluminum layer to a predetermined depth; depositing a catalyst metal layer on the bottoms of the holes; and growing the carbon nanotubes from the catalyst metal layer.
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