Invention Grant
- Patent Title: Method of horizontally growing carbon nanotubes and device having the same
- Patent Title (中): 水平生长碳纳米管的方法及其装置
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Application No.: US11036379Application Date: 2005-01-18
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Publication No.: US07115306B2Publication Date: 2006-10-03
- Inventor: Soo-hwan Jeong , Wan-jun Park , In-kyeong Yoo , Ju-hye Ko
- Applicant: Soo-hwan Jeong , Wan-jun Park , In-kyeong Yoo , Ju-hye Ko
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: KR10-2004-0012537 20040225
- Main IPC: H05H1/24
- IPC: H05H1/24

Abstract:
Provided are a method of growing carbon nanotubes and a carbon nanotube device. The method includes: depositing an aluminum layer on a substrate; forming an insulating layer over the substrate to cover the aluminum layer; patterning the insulating layer and the aluminum layer on the substrate to expose a side of the aluminum layer; forming a plurality of holes in the exposed side of the aluminum layer to a predetermined depth; depositing a catalyst metal layer on the bottoms of the holes; and growing the carbon nanotubes from the catalyst metal layer.
Public/Granted literature
- US20050188444A1 Method of horizontally growing carbon nanotubes and device having the same Public/Granted day:2005-08-25
Information query
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