发明授权
US07115470B2 Methods of fabricating flash memory cell having split-gate structure using spacer oxidation process
失效
使用间隔物氧化工艺制造具有分裂栅极结构的闪存单元的方法
- 专利标题: Methods of fabricating flash memory cell having split-gate structure using spacer oxidation process
- 专利标题(中): 使用间隔物氧化工艺制造具有分裂栅极结构的闪存单元的方法
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申请号: US10840803申请日: 2004-05-07
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公开(公告)号: US07115470B2公开(公告)日: 2006-10-03
- 发明人: Jae-Hyun Park , Jae-Min Yu , Chul-Soon Kwon , In-gu Yoon , Eung-yung Ahn , Jung-ho Moon , Yong-Sun Lee , Sung-Yung Jeon
- 申请人: Jae-Hyun Park , Jae-Min Yu , Chul-Soon Kwon , In-gu Yoon , Eung-yung Ahn , Jung-ho Moon , Yong-Sun Lee , Sung-Yung Jeon
- 申请人地址: KR
- 专利权人: Samsung Electronics, Ltd., Co.
- 当前专利权人: Samsung Electronics, Ltd., Co.
- 当前专利权人地址: KR
- 代理机构: Mills & Onello LLP
- 优先权: KR10-2003-0066011 20030923
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
There is provided a method of fabricating a split-gate flash memory cell using a spacer oxidation process. An oxidation barrier layer is formed on a floating gate layer, and an opening to expose a portion of the floating gate layer is formed in the oxidation barrier layer. Subsequently, a spacer is formed on a sidewall of the opening with a material layer having insulation property by oxidizing, and an inter-gate oxide layer pattern between a floating gate and a control gate is formed in the opening while the spacer is oxidized by performing an oxidation process.