Invention Grant
- Patent Title: Method of fabricating a semiconductor device and a method of generating a mask pattern
- Patent Title (中): 制造半导体器件的方法和产生掩模图案的方法
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Application No.: US10663642Application Date: 2003-09-17
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Publication No.: US07115478B2Publication Date: 2006-10-03
- Inventor: Kiyohito Mukai , Tadashi Tanimoto , Mitsumi Ito
- Applicant: Kiyohito Mukai , Tadashi Tanimoto , Mitsumi Ito
- Applicant Address: JP Osaka
- Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JPP2002-270068 20020917
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
At least a groove for separating a semiconductor substrate into a first region of a relatively large area and a second region of a relatively small area is formed. An insulating film is formed on the surface of the semiconductor substrate including the interior of the groove. The insulating film is etched using an etching mask having a lattice window pattern in such a manner that openings corresponding to the lattice window pattern are formed in the first region. As an alternative, openings corresponding to a single opening pattern are formed in the first region using an etching mask having the single opening pattern and the lattice window pattern, and the insulating film is etched in such a manner that openings corresponding to the lattice window pattern are formed in the second region. In both cases, the remaining insulating film is polished off.
Public/Granted literature
- US20040083445A1 Method of fabricating a semiconductor device and a method of generating a mask pattern Public/Granted day:2004-04-29
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