发明授权
- 专利标题: Semiconductor device including stress inducing films formed over n-channel and p-channel field effect transistors and a method of manufacturing the same
- 专利标题(中): 包括在n沟道和p沟道场效应晶体管上形成的应力诱导膜的半导体器件及其制造方法
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申请号: US10363065申请日: 2001-06-29
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公开(公告)号: US07115954B2公开(公告)日: 2006-10-03
- 发明人: Akihiro Shimizu , Nagatoshi Ooki , Yusuke Nonaka , Katsuhiko Ichinose
- 申请人: Akihiro Shimizu , Nagatoshi Ooki , Yusuke Nonaka , Katsuhiko Ichinose
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout and Kraus, LLP.
- 优先权: JP2000-356497 20001122
- 国际申请: PCT/JP01/05633 WO 20010629
- 国际公布: WO02/43151 WO 20020530
- 主分类号: H01L29/76
- IPC分类号: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要:
A semiconductor device has an n channel conductivity type field effect transistor having a channel formation region formed in a first region on one main surface of a semiconductor substrate and a p channel conductivity type field effect transistor having a channel formation region formed in a second region on the main surface of the semiconductor substrate, which second region is different from the first region. An internal stress generated in the channel formation region of the n channel conductivity type field effect transistor is different from an internal stress generated in the channel formation region of the p channel conductivity type field effect transistor. The internal stress generated in the channel formation region of the n channel conductivity type field effect transistor is a tensile stress, while the internal stress generated in the channel formation region of the p channel conductivity type field effect transistor is a compressive stress.
公开/授权文献
- US20040029323A1 Semiconductor device and method for fabricating the same 公开/授权日:2004-02-12