Invention Grant
- Patent Title: Field diode detection of excess light conditions for spatial light modulator
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Application No.: US10328508Application Date: 2002-12-23
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Publication No.: US07116459B2Publication Date: 2006-10-03
- Inventor: James D. Huffman
- Applicant: James D. Huffman
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Charles A. Brill; Wade James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G02F1/01
- IPC: G02F1/01
Abstract:
An improved SLM that is capable of detecting when light incident on the SLM exceeds a predetermined threshold. A diode is fabricated around, or within the pixel array. Light incident on the array (and the diode) results in a current increase through the diode, which may detected and used to initiate a disable signal to control circuitry of the SLM.
Public/Granted literature
- US20030123123A1 Field diode detection of excess light conditions for spatial light modulator Public/Granted day:2003-07-03
Information query
