发明授权
- 专利标题: Edge-emitting type semiconductor laser
- 专利标题(中): 边缘发射型半导体激光器
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申请号: US10766035申请日: 2004-01-29
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公开(公告)号: US07116691B2公开(公告)日: 2006-10-03
- 发明人: Masanobu Ando , Hiroshi Watanabe
- 申请人: Masanobu Ando , Hiroshi Watanabe
- 申请人地址: JP Aichi-ken
- 专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人地址: JP Aichi-ken
- 代理机构: McGinn IP Law Group, PLLC
- 优先权: JP2003-022113 20030130
- 主分类号: H01S5/20
- IPC分类号: H01S5/20
摘要:
The interval Λ between each stripe of interference fringe generated in a conventional n-type contact layer is determined by a function (f(λ)=λ(n2−neq2)−1/2/2) wherein λ, n, and neq represent luminous wavelength λ of lights radiated from a light emitting part 104, refractive index n of the n-type contact layer, and equivalent refractive index neq of the n-type contact layer in guided wave mode, respectively. The remaining thickness δ of the n-type contact layer 102 at the concave part D which is formed at the back surface of the crystal growth substrate may be about Λ/2. When at least one portion of the n-type contact layer which is formed right beneath the laser cavity remains with about δ in thickness, the n-type contact layer arranged even right beneath the laser cavity can maintain excellent contact to a negative electrode. As a result, effective light confinement enables to adequately suppress ripples in FFP owing to lights leaked into the n-type contact layer, to thereby provide a semiconductor laser which oscillates stable lights.
公开/授权文献
- US20040247007A1 Edge-emitting type semiconductor laser 公开/授权日:2004-12-09