发明授权
- 专利标题： Method of fabricating an integrated silicon-germanium heterobipolar transistor and an integrated silicon-germanium heterobipolar transistor
- 专利标题（中）： 制造集成硅 - 锗异双极晶体管和集成硅 - 锗异双极晶体管的方法
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申请号： US10824745申请日： 2004-04-15
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公开(公告)号： US07118981B2公开(公告)日： 2006-10-10
- 发明人: Alfred Haeusler , Philipp Steinmann , Scott Balster , Badih El-Kareh
- 申请人： Alfred Haeusler , Philipp Steinmann , Scott Balster , Badih El-Kareh
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; W. James Brady, III; Frederick J. Telecky, Jr.
- 优先权： DE10324065 20030527
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L21/8222
摘要：
In a method of fabricating an integrated silicon-germanium heterobipolar transistor a silicon dioxide layer arranged between a silicon-germanium base layer and a silicon emitter layer is formed by means of Rapid Thermal Processing (RTP) to ensure enhanced component properties of the integrated silicon-germanium heterobipolar transistor.
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