发明授权
- 专利标题: Controlled polymerization on plasma reactor wall
- 专利标题(中): 等离子体反应器壁上的控制聚合
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申请号: US10288344申请日: 2002-11-04
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公开(公告)号: US07122125B2公开(公告)日: 2006-10-17
- 发明人: Shashank C. Deshmukh , Thorsten B. Lill
- 申请人: Shashank C. Deshmukh , Thorsten B. Lill
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Law Offices of Charles Guenzer
- 主分类号: B44C1/22
- IPC分类号: B44C1/22
摘要:
An integrated etch process, for example as used for etching an anti-reflection layer and an underlying aluminum layer, in which the chamber wall polymerization is controlled by coating polymer onto the sidewall by a plasma deposition process prior to inserting the wafer into the chamber, etching the structure, and after removing the wafer from the chamber, plasma cleaning the polymer from the chamber wall. The process is process is particularly useful when the etching is performed in a multi-step process and the polymer is used for passivating the etched structure, for example, a sidewall in an etched structure and in which the first etching step deposits polymer and the second etching step removes polymer. The controlled polymerization eliminates interactions of the etching with the chamber wall material, produces repeatable results between wafers, and eliminates in the etching plasma instabilities associated with changing wall conditions.
公开/授权文献
- US20040084409A1 Controlled polymerization on plasma reactor wall 公开/授权日:2004-05-06