发明授权
- 专利标题: Semiconductor acceleration sensor and process for manufacturing the same
- 专利标题(中): 半导体加速度传感器及其制造方法
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申请号: US10530341申请日: 2003-10-03
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公开(公告)号: US07122396B2公开(公告)日: 2006-10-17
- 发明人: Yoshiyuki Nakamizo , Tsutomu Sawai , Masato Ando
- 申请人: Yoshiyuki Nakamizo , Tsutomu Sawai , Masato Ando
- 申请人地址: JP Kami-Niikawagu
- 专利权人: Hokuriku Electric Industry Co., Ltd.
- 当前专利权人: Hokuriku Electric Industry Co., Ltd.
- 当前专利权人地址: JP Kami-Niikawagu
- 代理机构: Rankin, Hill, Porter & Clark LLP
- 优先权: JP2002-292782 20021004
- 国际申请: PCT/JP03/12733 WO 20031003
- 国际公布: WO2004/031781 WO 20040415
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/20
摘要:
The present invention provides a semiconductor acceleration sensor wherein a semiconductor element is prevented from being damaged even when at least part of a weight is disposed in an internal space of a semiconductor sensor element and the mass of a weight is accordingly increased. An inner peripheral surface of a support portion 9 is constituted by four trapezoidal inclined surfaces 13 of a substantially identical shape which are annularly combined so as to define an outer peripheral surface of a frust-pyramidal space. A weight 3 is so constructed as to have an abutting portion including a linear portion 3d which abuts against the inclined surfaces 13 constituting the inner peripheral surface of the support portion 9 when the weight 3 makes a maximum displacement in a direction where a diaphragm portion 11 is located. The abutting portion 3d has a circular outline shape as seen from a side where a weight fixing portion 7 is located. A stopper structure is constituted by the inclined surfaces 13 and the abutting portion 3d of the weight 3, for restricting a displacement range of the weight 3 in the direction where the diaphragm portion 11 is located.
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