发明授权
US07122415B2 Atomic layer deposition of interpoly oxides in a non-volatile memory device
有权
在非易失性存储器件中原子层沉积多晶氧化物
- 专利标题: Atomic layer deposition of interpoly oxides in a non-volatile memory device
- 专利标题(中): 在非易失性存储器件中原子层沉积多晶氧化物
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申请号: US10243379申请日: 2002-09-12
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公开(公告)号: US07122415B2公开(公告)日: 2006-10-17
- 发明人: Chuck Jang , Zhong Dong , Vei-Han Chan , Ching-Hwa Chen
- 申请人: Chuck Jang , Zhong Dong , Vei-Han Chan , Ching-Hwa Chen
- 申请人地址: TW Hsin-Chu
- 专利权人: ProMOS Technologies, Inc.
- 当前专利权人: ProMOS Technologies, Inc.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: MacPherson Kwok Chen & Heid LLP
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
Aluminum oxide is deposited by atomic layer deposition to form a high-k dielectric for the interpoly dielectric layer of a non-volatile memory device. The increased capacitive coupling can allow a thicker oxide layer to be used between the floating gate and the control gate, resulting in improved reliability and longer lifetime of the memory cells fabricated according to this invention.