发明授权
- 专利标题： Annealing apparatus, annealing method, and manufacturing method of a semiconductor device
- 专利标题（中）： 退火装置，退火方法以及半导体装置的制造方法
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申请号： US10926306申请日： 2004-08-26
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公开(公告)号： US07122448B2公开(公告)日： 2006-10-17
- 发明人: Takayuki Ito , Kyoichi Suguro
- 申请人： Takayuki Ito , Kyoichi Suguro
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JPP2004-168893 20040607
- 主分类号： H01L21/301
- IPC分类号： H01L21/301 ; H01L21/326
摘要：
An annealing apparatus, includes a substrate stage placing a semiconductor substrate; a light source facing the substrate stage, configured to irradiate a pulsed light at a pulse width of approximately 0.1 ms to 100 ms on a surface of the semiconductor substrate; and a mask configured to selectively reduce intensity of the light transmitting a peripheral region along an outer edge of the semiconductor substrate, so as to define an irradiation region by the peripheral region.
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