发明授权
US07123529B1 Sense amplifier including multiple conduction state field effect transistor
有权
感应放大器包括多导通状态场效应晶体管
- 专利标题: Sense amplifier including multiple conduction state field effect transistor
- 专利标题(中): 感应放大器包括多导通状态场效应晶体管
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申请号: US11160054申请日: 2005-06-07
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公开(公告)号: US07123529B1公开(公告)日: 2006-10-17
- 发明人: David R. Hanson , David M. Onsongo , Dureseti Chidambarrao
- 申请人: David R. Hanson , David M. Onsongo , Dureseti Chidambarrao
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Daryl K. Neff; H. Daniel Schnurmann
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
An integrated circuit is provided which includes a sensing circuit. In the sensing circuit, a pair of conductors including a first conductor and a second conductor are adapted to conduct a first differential signal having a small voltage difference and a second differential signal having a rail-to-rail voltage difference. A sense amplifier is coupled to the pair of conductors, the sense amplifier being operable to amplify the first differential signal into the second differential signal. The sensing circuit further includes a multiple conduction state field effect transistor or “multi-state FET” which has a source, a drain, and a gate operable to control conduction between the source and the drain. The multi-state FET has a first threshold voltage and a second threshold voltage which is effective at the same time as the first threshold voltage such that the multi-state FET is operable by the gate voltage to switch between an essentially nonconductive state, a first conductive state when a gate-source voltage applied between a gate and a source of the FET is between the first threshold voltage and the second threshold voltage, and a second conductive state when the gate voltage exceeds the second threshold voltage. The multi-state FET is used to perform an operation included in amplifying the first signal into the second signal by the sense amplifier.
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