Invention Grant
US07125776B2 Multi-step chemical mechanical polishing of a gate area in a FinFET
有权
FinFET中栅极区域的多步化学机械抛光
- Patent Title: Multi-step chemical mechanical polishing of a gate area in a FinFET
- Patent Title (中): FinFET中栅极区域的多步化学机械抛光
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Application No.: US11030191Application Date: 2005-01-07
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Publication No.: US07125776B2Publication Date: 2006-10-24
- Inventor: Krishnashree Achuthan , Shibly S. Ahmed , Haihong Wang , Bin Yu
- Applicant: Krishnashree Achuthan , Shibly S. Ahmed , Haihong Wang , Bin Yu
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Harrity Snyder LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/00 ; H01L21/84
Abstract:
A method of manufacturing a MOSFET type semiconductor device includes planarizing a gate material layer that is deposited over a channel. The planarization is performed in a multi-step process that includes an initial “rough” planarization and then a “fine” planarization. The slurry used for the finer planarization may include added material that tends to adhere to low areas of the gate material.
Public/Granted literature
- US20050118824A1 Multi-step chemical mechanical polishing of a gate area in a FinFET Public/Granted day:2005-06-02
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