发明授权
- 专利标题: Magnetic cell and magnetic memory
- 专利标题(中): 磁性细胞和磁记忆
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申请号: US11227493申请日: 2005-09-16
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公开(公告)号: US07126849B2公开(公告)日: 2006-10-24
- 发明人: Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
- 申请人: Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2002-342447 20021126
- 主分类号: G11C11/14
- IPC分类号: G11C11/14
摘要:
A magnetic cell includes: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
公开/授权文献
- US20060007730A1 Magnetic cell and magnetic memory 公开/授权日:2006-01-12
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