发明授权
- 专利标题: Sensing circuit for single bit-line semiconductor memory device
- 专利标题(中): 单位线半导体存储器件的感应电路
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申请号: US10906069申请日: 2005-02-01
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公开(公告)号: US07130233B2公开(公告)日: 2006-10-31
- 发明人: Shih-Huang Huang
- 申请人: Shih-Huang Huang
- 申请人地址: TW Hain-Chu
- 专利权人: MediaTek Incorporation
- 当前专利权人: MediaTek Incorporation
- 当前专利权人地址: TW Hain-Chu
- 代理商 Winton Hsu
- 优先权: TW92106411A 20030321
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
A sensing circuit for sensing logic data is shown. A memory cell is electrically connected to a bit line. The sensing circuit includes a first pre-charging module electrically connected to the bit line for pre-charging the bit line. A selecting module is electrically connected between the bit line and a first data line for transmitting signals and for isolating capacitances. A second pre-charging module is electrically connected to the first data line for pre-charging the first data line. A first voltage keeping module is electrically connected to the first data line for maintaining a signal on the first data line at a voltage level. An isolating module is electrically connected between the first data line and a second data line for transmitting signals and for isolating capacitances. A third pre-charging module is electrically connected to the second data line for pre-charging the second data line.