发明授权
US07130233B2 Sensing circuit for single bit-line semiconductor memory device 有权
单位线半导体存储器件的感应电路

  • 专利标题: Sensing circuit for single bit-line semiconductor memory device
  • 专利标题(中): 单位线半导体存储器件的感应电路
  • 申请号: US10906069
    申请日: 2005-02-01
  • 公开(公告)号: US07130233B2
    公开(公告)日: 2006-10-31
  • 发明人: Shih-Huang Huang
  • 申请人: Shih-Huang Huang
  • 申请人地址: TW Hain-Chu
  • 专利权人: MediaTek Incorporation
  • 当前专利权人: MediaTek Incorporation
  • 当前专利权人地址: TW Hain-Chu
  • 代理商 Winton Hsu
  • 优先权: TW92106411A 20030321
  • 主分类号: G11C7/00
  • IPC分类号: G11C7/00
Sensing circuit for single bit-line semiconductor memory device
摘要:
A sensing circuit for sensing logic data is shown. A memory cell is electrically connected to a bit line. The sensing circuit includes a first pre-charging module electrically connected to the bit line for pre-charging the bit line. A selecting module is electrically connected between the bit line and a first data line for transmitting signals and for isolating capacitances. A second pre-charging module is electrically connected to the first data line for pre-charging the first data line. A first voltage keeping module is electrically connected to the first data line for maintaining a signal on the first data line at a voltage level. An isolating module is electrically connected between the first data line and a second data line for transmitting signals and for isolating capacitances. A third pre-charging module is electrically connected to the second data line for pre-charging the second data line.
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