发明授权
US07132222B2 Magnetic etching process, especially for magnetic or magnetooptic recording
有权
磁性蚀刻工艺,特别适用于磁性或磁光记录
- 专利标题: Magnetic etching process, especially for magnetic or magnetooptic recording
- 专利标题(中): 磁性蚀刻工艺,特别适用于磁性或磁光记录
-
申请号: US10825454申请日: 2004-04-14
-
公开(公告)号: US07132222B2公开(公告)日: 2006-11-07
- 发明人: Claude Chappert , Harry Bernas , Jacques Ferre
- 申请人: Claude Chappert , Harry Bernas , Jacques Ferre
- 申请人地址: FR Paris Cedex 16
- 专利权人: Centre National de la Recherche Scientifique (CNRS)
- 当前专利权人: Centre National de la Recherche Scientifique (CNRS)
- 当前专利权人地址: FR Paris Cedex 16
- 代理机构: Blakely Sokoloff Taylor & Zafman LLP
- 优先权: FR9800199 19980112
- 主分类号: G03C5/00
- IPC分类号: G03C5/00 ; G11B11/10 ; H01F41/14
摘要:
Process for writing on a material, in which said material is irradiated by means of a beam of light ions, such as for example He+ ions, said beam of light ions having an energy of the order of or less than a hundred keV, wherein this material comprises a plurality of superposed thin-layers, at least one of said thin layers being magnetic and in that one or more regions having sizes of the order of 1 micrometer or less are irradiated, the irradiation dose being controlled so as to be a few 1016 ions/cm2 or less, the irradiation modifying the composition of atomic planes in the material at one or more interfaces between two layers of the latter.