发明授权
- 专利标题： Bonding pad structure to minimize IMD cracking
- 专利标题（中）： 粘合垫结构以最小化IMD开裂
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申请号： US10916797申请日： 2004-08-12
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公开(公告)号： US07135395B2公开(公告)日： 2006-11-14
- 发明人: Chung Liu , Yuan-Lung Liu , Ruey-Yun Shiue
- 申请人： Chung Liu , Yuan-Lung Liu , Ruey-Yun Shiue
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method is disclosed of forming a bonding pad that is immune to IMD cracking. A partially processes semiconductor wafer is provided having all metal levels completed. A blanket dielectric layer is formed over the uppermost metal level. Patterning and etching said dielectric layer horizontal and vertical arrays of trenches are formed passing through the dielectric layer and separating the dielectric layer into cells. The trenches are filled with a conducting material and, after performing CMP, bonding metal patterns are deposited. Wires are bonded onto said bonding metal patters, after which a passivation layer is formed.
公开/授权文献
- US20050064693A1 Novel bonding pad structure to minimize IMD cracking 公开/授权日：2005-03-24
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