- 专利标题: Semiconductor memory and its production process
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申请号: US09925952申请日: 2001-08-10
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公开(公告)号: US07135726B2公开(公告)日: 2006-11-14
- 发明人: Tetsuo Endoh , Fujio Masuoka , Takuji Tanigami , Takashi Yokoyama , Noboru Takeuchi
- 申请人: Tetsuo Endoh , Fujio Masuoka , Takuji Tanigami , Takashi Yokoyama , Noboru Takeuchi
- 申请人地址: JP Miyagi JP Osaka
- 专利权人: Fujio Masuoka,Sharp Kabushiki Kaisha
- 当前专利权人: Fujio Masuoka,Sharp Kabushiki Kaisha
- 当前专利权人地址: JP Miyagi JP Osaka
- 代理机构: Nixon & Vanderhye P.C.
- 优先权: JP2000-286162 20000811
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L29/94
摘要:
A semiconductor memory comprises: a fist conductivity type semiconductor substrate and one or more memory cells constituted of an island-like semiconductor layer, a charge storage layer and a control gate, the charge storage layer and the control gate being formed to entirely or partially encircle a sidewall of the island-like semiconductor layer, wherein at least one of said one or more memory cells is electrically insulated from the semiconductor substrate.
公开/授权文献
- US20020036308A1 Semiconductor memory and its production process 公开/授权日:2002-03-28
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