发明授权
US07138073B2 Slurry for chemical mechanical polishing for copper and method of manufacturing semiconductor device using the slurry
有权
用于铜的化学机械抛光的浆料和使用该浆料的制造半导体器件的方法
- 专利标题： Slurry for chemical mechanical polishing for copper and method of manufacturing semiconductor device using the slurry
- 专利标题（中）： 用于铜的化学机械抛光的浆料和使用该浆料的制造半导体器件的方法
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申请号： US10762514申请日： 2004-01-23
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公开(公告)号： US07138073B2公开(公告)日： 2006-11-21
- 发明人: Gaku Minamihaba , Hiroyuki Yano
- 申请人： Gaku Minamihaba , Hiroyuki Yano
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2001-366938 20011130
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A method of manufacturing a semiconductor device using a polishing slurry for CMP of Cu, which includes a first complexing agent containing a heterocyclic compound which is capable of forming a water-insoluble complex with Cu, and a second complexing agent containing a heterocyclic compound which is capable of forming a slightly water-soluble or water-soluble complex with Cu to thereby provide at least one extra ligand subsequent to formation of the complex.