发明授权
- 专利标题: HDP-based ILD capping layer
- 专利标题(中): 基于HDP的ILD覆盖层
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申请号: US10904827申请日: 2004-12-01
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公开(公告)号: US07138717B2公开(公告)日: 2006-11-21
- 发明人: Yun-Yu Wang , Richard A. Conti , Chung-Ping Eng , Matthew C. Nicholls
- 申请人: Yun-Yu Wang , Richard A. Conti , Chung-Ping Eng , Matthew C. Nicholls
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Lisa U. Jaklitsch
- 主分类号: H01L29/40
- IPC分类号: H01L29/40
摘要:
A cap nitride stack which prevents etch penetration to the HDP nitride while maintaining the electromigration benefits of HDP nitride atop Cu. In one embodiment, the stack comprises a first layer of HDP nitride and a second layer of a Si—C—H compound disposed over the first layer. The Si—C—H compound is for example BLoK, or N-BLoK (Si—C—H—N), and is selected from a group of materials that has high selectivity during via RIE such that RIE chemistry from the next wiring level does not punch through. Carbon and nitrogen are the key elements. In another embodiment, the stack comprises a first layer of HDP nitride, followed by a second layer of UVN (a plasma nitride), and a third layer comprising HDP nitride disposed over the second layer.
公开/授权文献
- US20060113672A1 IMPROVED HDP-BASED ILD CAPPING LAYER 公开/授权日:2006-06-01