Invention Grant
- Patent Title: Low temperature silicided tip
- Patent Title (中): 低温硅化尖端
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Application No.: US10759565Application Date: 2004-01-16
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Publication No.: US07142449B2Publication Date: 2006-11-28
- Inventor: James D. Smith , Thomas E. Novet , Alexander Govyadinov
- Applicant: James D. Smith , Thomas E. Novet , Alexander Govyadinov
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: G11C11/14
- IPC: G11C11/14
Abstract:
A tip, connected to a metal chip component, for forming readable changes in a memory storage system is disclosed. The tip includes a conductive layer, an amorphous silicon layer, and a silicide outer layer. The silicide outer layer contains a metal that has an anneal temperature to form the silicide outer layer at a temperature below that which damages the chip component.
Public/Granted literature
- US20050157562A1 Low temperature silicided tip Public/Granted day:2005-07-21
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