发明授权
US07144490B2 Method for selective electroplating of semiconductor device I/O pads using a titanium-tungsten seed layer
有权
使用钛 - 钨种子层选择性地电镀半导体器件I / O焊盘的方法
- 专利标题： Method for selective electroplating of semiconductor device I/O pads using a titanium-tungsten seed layer
- 专利标题（中）： 使用钛 - 钨种子层选择性地电镀半导体器件I / O焊盘的方法
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申请号： US10707047申请日： 2003-11-18
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公开(公告)号： US07144490B2公开(公告)日： 2006-12-05
- 发明人: Tien-Jen Cheng , David E. Eichstadt , Jonathan H. Griffith , Sarah H. Knickerbocker , Rosemary A. Previti-Kelly , Roger A. Quon , Kamalesh K. Srivastava , Keith Kwong-Hon Wong
- 申请人： Tien-Jen Cheng , David E. Eichstadt , Jonathan H. Griffith , Sarah H. Knickerbocker , Rosemary A. Previti-Kelly , Roger A. Quon , Kamalesh K. Srivastava , Keith Kwong-Hon Wong
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 主分类号： C25D5/02
- IPC分类号： C25D5/02 ; C25D7/12
摘要：
A method for selective electroplating of a semiconductor input/output (I/O) pad includes forming a titanium-tungsten (TiW) layer over a passivation layer on a semiconductor substrate, the TiW layer further extending into an opening formed in the passivation layer for exposing the I/O pad, such that the TiW layer covers sidewalls of the opening and a top surface of the I/O pad. A seed layer is formed over the TiW layer, and portions of the seed layer are selectively removed such that remaining seed layer material corresponds to a desired location of interconnect metallurgy for the I/O pad. At least one metal layer is electroplated over the remaining seed layer material, using the TiW layer as a conductive electroplating medium.