发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11022644申请日： 2004-12-28
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公开(公告)号： US07144804B2公开(公告)日： 2006-12-05
- 发明人: Gaku Minamihaba , Dai Fukushima , Yoshikuni Tateyama , Hiroyuki Yano
- 申请人： Gaku Minamihaba , Dai Fukushima , Yoshikuni Tateyama , Hiroyuki Yano
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2002-191632 20020701
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A semiconductor device comprises a semiconductor substrate, an interlayer insulating film including a first insulating film formed above the substrate and having a relative dielectric constant smaller than 2.5 and a second insulating film formed to cover the first insulating film and having a relative dielectric constant larger than that of the first insulating film, and a buried wiring formed within the interlayer insulating film. A bottom portion of the second insulating film is buried in the first insulating film at a number of points.
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