- 专利标题: Low resistivity titanium silicide on heavily doped semiconductor
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申请号: US10247071申请日: 2002-09-18
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公开(公告)号: US07144807B2公开(公告)日: 2006-12-05
- 发明人: Scott Brad Herner , Michael A. Vyvoda
- 申请人: Scott Brad Herner , Michael A. Vyvoda
- 申请人地址: US CA Sunnyvale
- 专利权人: SanDisk 3D LLC
- 当前专利权人: SanDisk 3D LLC
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Brinks Hofer Gilson & Lione
- 主分类号: H01L21/44
- IPC分类号: H01L21/44 ; H01L21/4763
摘要:
Low resistivity, C54-phase TiSi2 is formed in narrow lines on heavily doped polysilicon by depositing a bi-layer silicon film. A thin, undoped amorphous layer is deposited on top of a heavily doped layer. The thickness of the undoped amorphous Si is about 2.4 times the thickness of the subsequently deposited Ti film. Upon thermal annealing above 750° C., the undoped amorphous Si is consumed by the reaction of Ti+Si to form TiSi2, forming a low-resistivity, C54-phase TiSi2 film on top of heavily doped polysilicon. The annealing temperature required to form C54 phase TiSi2 is reduced by consuming undoped amorphous Si in the reaction of Ti and Si, as compared with heavily doped polysilicon. Narrow lines (