发明授权
- 专利标题： Semiconductor device having a multilayer interconnection structure and fabrication process thereof
- 专利标题（中）： 具有多层互连结构的半导体器件及其制造方法
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申请号： US10735886申请日： 2003-12-16
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公开(公告)号： US07145241B2公开(公告)日： 2006-12-05
- 发明人: Toshio Takayama , Kuniyuki Narukawa , Hiroshi Mizutani
- 申请人： Toshio Takayama , Kuniyuki Narukawa , Hiroshi Mizutani
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Armstrong, Kratz, Quintos, Hanson & Brooks, LLP.
- 优先权： JP2002-371134 20021220
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A multilayer interconnection structure includes a first interconnection layer having a copper interconnection pattern and a second interconnection layer having an aluminum interconnection layer and formed on the first interconnection layer via an intervening interlayer insulation film, wherein a tungsten plug is formed in a via-hole formed in the interlayer insulation film so as to connect the first interconnection layer and the second interconnection layer electrically. The via-hole has a depth/diameter ratio of 1.25 or more, and there is formed a conductive nitride film between the outer wall of the tungsten plug and an inner wall of the via-hole such that the entirety of the conductive nitride film is formed of a conductive nitride.
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