发明授权
US07145254B2 Transfer-molded power device and method for manufacturing transfer-molded power device
有权
传递成型功率器件及其传输模制功率器件的制造方法
- 专利标题: Transfer-molded power device and method for manufacturing transfer-molded power device
- 专利标题(中): 传递成型功率器件及其传输模制功率器件的制造方法
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申请号: US10201556申请日: 2002-07-24
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公开(公告)号: US07145254B2公开(公告)日: 2006-12-05
- 发明人: Naohiko Hirano , Takanori Teshima , Yoshimi Nakase , Kenji Yagi , Yasushi Ookura , Kuniaki Mamitsu , Kazuhito Nomura , Yutaka Fukuda
- 申请人: Naohiko Hirano , Takanori Teshima , Yoshimi Nakase , Kenji Yagi , Yasushi Ookura , Kuniaki Mamitsu , Kazuhito Nomura , Yutaka Fukuda
- 申请人地址: JP Kariya
- 专利权人: Denso Corporation
- 当前专利权人: Denso Corporation
- 当前专利权人地址: JP Kariya
- 代理机构: Posz Law Group, PLC
- 优先权: JP2001-225963 20010726; JP2002-86408 20020326
- 主分类号: H01L23/10
- IPC分类号: H01L23/10 ; H01L23/28
摘要:
A semiconductor device includes a semiconductor chip that generates heat in operation, a pair of heat sinks for cooling the chip, and a mold resin, in which the chip and the heat sinks are embedded. The thickness t1 of the chip and the thickness t2 of one of heat sinks that is joined to the chip using a solder satisfy the equation of t2/t1≧5. Furthermore, the thermal expansion coefficient α1 of the heat sinks and the thermal expansion coefficient α2 of the mold resin satisfy the equation of 0.5≦α2/α1≦1.5. In addition, the surface of the chip that faces the solder has a roughness Ra that satisfies the equation of Ra≦500 nm. Moreover, the solder is a Sn-based solder to suppress relaxation of a compressive stress in the chip, which is caused by the creeping of the solder.