发明授权
- 专利标题： Semiconductor integrated circuit device
- 专利标题（中）： 半导体集成电路器件
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申请号： US10933323申请日： 2004-09-03
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公开(公告)号： US07145796B2公开(公告)日： 2006-12-05
- 发明人: Yoshiaki Fukuzumi , Hiroaki Yoda
- 申请人： Yoshiaki Fukuzumi , Hiroaki Yoda
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2004-078721 20040318
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A semiconductor integrated circuit device includes a magneto-resistive effect element and a plug. The magneto-resistive effect element includes a first magnetic layer whose magnetization direction is fixed and a second magnetic layer whose magnetization direction can be changed. The plug is formed to penetrate through the second magnetic layer in the film thickness direction of the second magnetic layer and used to apply a write magnetic field to the second magnetic layer.
公开/授权文献
- US20050207216A1 Semiconductor integrated circuit device 公开/授权日：2005-09-22
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