- 专利标题： Method of manufacturing thin film transistor
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申请号： US11196574申请日： 2005-08-04
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公开(公告)号： US07148091B2公开(公告)日： 2006-12-12
- 发明人: Yasuyoshi Itoh , Takeshi Kubota , Toru Takeguchi
- 申请人： Yasuyoshi Itoh , Takeshi Kubota , Toru Takeguchi
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Buchanan Ingersoll & Rooney PC
- 优先权： JP2004-230825 20040806
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/336
摘要：
Impurity ions contained in a semiconductor layer are diffused downwardly from a gate electrode by irradiating laser light from the back surface of a transparent substrate after source-drain regions are formed. Thus, a GOLD structure is formed. Consequently, the GOLD structure is formed by performing a smaller number of processes. Also, variation in characteristics can be suppressed by preventing occurrence of asymmetry between left and right LDD regions.
公开/授权文献
- US20060030086A1 Method of manufacturing thin film transistor 公开/授权日：2006-02-09
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