发明授权
- 专利标题： Semiconductor device having a fully silicided gate electrode and method of manufacture therefor
- 专利标题（中）： 具有全硅化物栅电极的半导体器件及其制造方法
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申请号： US10808168申请日： 2004-03-24
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公开(公告)号： US07148143B2公开(公告)日： 2006-12-12
- 发明人: Haowen Bu , Jiong-Ping Lu , Shaofeng Yu , Ping Jiang , Clint Montgomery
- 申请人： Haowen Bu , Jiong-Ping Lu , Shaofeng Yu , Ping Jiang , Clint Montgomery
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Peter K. McLarty; W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/4763 ; H01L21/461 ; H01L21/302
摘要：
The present invention provides a semiconductor device, a method of manufacture therefor, and a method for manufacturing an integrated circuit. The semiconductor device (100), among other possible elements, includes a silicided gate electrode (150) located over a substrate (110), the silicided gate electrode (150) having gate sidewall spacers (160) located on sidewalls thereof. The semiconductor device (100) further includes source/drain regions (170) located in the substrate (110) proximate the silicided gate electrode (150), and silicided source/drain regions (180) located in the source/drain regions (170) and at least partially under the gate sidewall spacers (160).
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