To realize a field emission type image display device which can obtain a high current density at low voltage driving, assuming a diagonal screen size of the display region as D(mm), the number of the pixels which are arranged in the x direction as Nh, the number of the pixels which are arranged in the y direction as Nv, the distance between the electron passing apertures formed in the strip-like electrode elements which constitute the control electrodes as db(mm), the distance between the electron source and the strip-like electrode element as Lkg(mm), and an aperture diameter of the electron passing apertures as φG(mm),provided that the aperture diameter φG(mm) is expressed by the following formula (45), D 3 · Nh 2 + Nv 2 - 2 ⁢ db > ( - 0.23 · ln ⁡ ( db ) + 0.49 ) · Lkg + 0.02 · ln ⁡ ( db ) + 0.125 ( 45 ) the following formula (46) is established. (0.46·ln(db)+2.5)·Lkg+0.006·ln(db)+0.04≦φG≦(−0.41·ln(db)−0.68)·Lkg+0.014·ln(db)+0.145  (46)