Invention Grant
- Patent Title: Method of refreshing a memory device utilizing PASR and piled refresh schemes
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Application No.: US11125687Application Date: 2005-05-10
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Publication No.: US07149140B2Publication Date: 2006-12-12
- Inventor: Hwang Hur , Tae Yun Kim
- Applicant: Hwang Hur , Tae Yun Kim
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2004-0093117 20041115
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C8/00
Abstract:
In a memory device having an N number of banks, a refresh operation according to a piled refresh scheme is performed during a self-refresh mode to refresh the N number of banks in regular sequence when it is necessary to refresh all of the N number of banks. A refresh operation according to a Partial Array Self Refresh (PASR) scheme is performed during a self-refresh mode when it is necessary to refresh only an i number of banks (where 1
Public/Granted literature
- US20060104139A1 Method of refreshing a memory device utilizing PASR and piled refresh schemes Public/Granted day:2006-05-18
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