发明授权
- 专利标题： Method for correcting a mask design layout
- 专利标题（中）： 校正掩模设计布局的方法
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申请号： US10787070申请日： 2004-02-25
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公开(公告)号： US07149999B2公开(公告)日： 2006-12-12
- 发明人: Andrew B. Kahng , Puneet Gupta , Dennis Sylvester , Jie Yang
- 申请人： Andrew B. Kahng , Puneet Gupta , Dennis Sylvester , Jie Yang
- 申请人地址： US CA Oakland US MI Ann Arbor
- 专利权人： The Regents of the University of California,The Regents of the University of Michigan
- 当前专利权人： The Regents of the University of California,The Regents of the University of Michigan
- 当前专利权人地址： US CA Oakland US MI Ann Arbor
- 代理机构： Greer, Burns & Crain, Ltd.
- 主分类号： G06F17/50
- IPC分类号： G06F17/50
摘要：
A method for performing a mask design layout resolution enhancement includes determining a level of correction for a mask design layout for a predetermined parametric yield with a minimum total correction cost. The mask design layout is corrected at a determined level of correction based on a correction algorithm if the correction is required. In this manner, only those printed features on the mask design layout that are critical for obtaining a desired performance yield are corrected, thereby reducing total cost of correction of the mask design layout.
公开/授权文献
- US20040237061A1 Method for correcting a mask design layout 公开/授权日：2004-11-25
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