发明授权
US07151045B2 Method for separating sapphire wafer into chips using dry-etching
有权
使用干蚀刻将蓝宝石晶片分离成芯片的方法
- 专利标题： Method for separating sapphire wafer into chips using dry-etching
- 专利标题（中）： 使用干蚀刻将蓝宝石晶片分离成芯片的方法
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申请号： US10810634申请日： 2004-03-29
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公开(公告)号： US07151045B2公开(公告)日： 2006-12-19
- 发明人: Ju Hyun Kim , Bang Won Oh
- 申请人： Ju Hyun Kim , Bang Won Oh
- 申请人地址： KR Kyungki-do
- 专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址： KR Kyungki-do
- 代理机构： Lowe Hauptman & Berner, LLP.
- 优先权： KR10-2003-0066080 20030923
- 主分类号： H01L21/46
- IPC分类号： H01L21/46 ; H01L21/78 ; H01L21/301
摘要：
A method for singulating a sapphire wafer, provided with semiconductor elements formed thereon, into unit chips includes (a) grinding a rear surface of the sapphire wafer so that the sapphire wafer has a designated thickness; (b) lapping the rear surface of the ground sapphire wafer so that the sapphire wafer has a designated thickness; (c) dry-etching the rear surface of the lapped sapphire wafer so that the sapphire wafer has a uniform thickness; and (d) scribing the rear surface of the dry-etched sapphire wafer.
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