发明授权
US07151053B2 Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications
有权
在大马士革应用中沉积包括掺杂氧化硅的电介质材料的方法
- 专利标题： Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications
- 专利标题（中）： 在大马士革应用中沉积包括掺杂氧化硅的电介质材料的方法
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申请号： US11118678申请日： 2005-04-28
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公开(公告)号： US07151053B2公开(公告)日： 2006-12-19
- 发明人: Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
- 申请人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson and Sheridan
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/31 ; H01L21/469
摘要：
Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.
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