Invention Grant
- Patent Title: Pattern measurement method, manufacturing method of semiconductor device, pattern measurement apparatus, and program
- Patent Title (中): 图案测量方法,半导体器件的制造方法,图案测量装置和程序
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Application No.: US10670387Application Date: 2003-09-26
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Publication No.: US07151855B2Publication Date: 2006-12-19
- Inventor: Tadashi Mitsui
- Applicant: Tadashi Mitsui
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2002-281572 20020926
- Main IPC: G06K9/46
- IPC: G06K9/46

Abstract:
A pattern measurement method includes acquiring graphic data of a plurality of patterns including image data; processing the graphic data to detect a coordinate of an edge point of the pattern; combining the edge points between the patterns to make a pair of edge points and calculating a distance between the edge points constituting each pair of edge points and an angle between a straight line which connects the edge point to the other edge point and an arbitrary axial line with respect to each pair of edge points to prepare a distance angle distribution map which is a distribution map of the calculated distance and angle of the pair of edge points; and evaluating at least one of a relation of shape between the patterns, a relation of size between the patterns, and a relative location between the patterns on the basis of the prepared distance angle distribution map.
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