发明授权
US07153589B1 Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film
失效
用于形成布线的Mo-W材料,Mo-W靶及其制造方法,以及Mo-W布线薄膜
- 专利标题: Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film
- 专利标题(中): 用于形成布线的Mo-W材料,Mo-W靶及其制造方法,以及Mo-W布线薄膜
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申请号: US09165743申请日: 1998-10-06
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公开(公告)号: US07153589B1公开(公告)日: 2006-12-26
- 发明人: Yasuo Kohsaka , Yoshiharu Fukasawa , Yoshiko Tsuji , Mitsushi Ikeda , Michio Sato , Toshihiro Maki
- 申请人: Yasuo Kohsaka , Yoshiharu Fukasawa , Yoshiko Tsuji , Mitsushi Ikeda , Michio Sato , Toshihiro Maki
- 申请人地址: JP
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JPP5-312936 19931214
- 主分类号: B12F3/00
- IPC分类号: B12F3/00
摘要:
A Mo—W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo—W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo—W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo—W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo—W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo—W wiring thin film to be produced with high repeatability.