发明授权
US07154742B1 Fluted anode with improved capacitance and capacitor comprising same
有权
具有改进的电容的带槽阳极和包括该阳极的电容器
- 专利标题: Fluted anode with improved capacitance and capacitor comprising same
- 专利标题(中): 具有改进的电容的带槽阳极和包括该阳极的电容器
-
申请号: US11431385申请日: 2006-05-10
-
公开(公告)号: US07154742B1公开(公告)日: 2006-12-26
- 发明人: Randy S. Hahn , John T. Kinard , Jeffery P. Poltorak , Eric Zediak
- 申请人: Randy S. Hahn , John T. Kinard , Jeffery P. Poltorak , Eric Zediak
- 申请人地址: US SC Greenville
- 专利权人: Kemet Electronics Corporation
- 当前专利权人: Kemet Electronics Corporation
- 当前专利权人地址: US SC Greenville
- 代理机构: Nexsen Pruet, LLC
- 代理商 Joseph T. Guy
- 主分类号: H01G9/04
- IPC分类号: H01G9/04 ; H01G9/145
摘要:
An anode with narrow flutes (
信息查询