Invention Grant
- Patent Title: Method of producing a semiconductor sensor component
- Patent Title (中): 半导体传感器部件的制造方法
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Application No.: US10473762Application Date: 2002-02-21
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Publication No.: US07160750B2Publication Date: 2007-01-09
- Inventor: Hubert Benzel , Heribert Weber , Frank Schaefer
- Applicant: Hubert Benzel , Heribert Weber , Frank Schaefer
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Kenyon & Kenyon LLP
- Priority: DE10117486 20010407
- International Application: PCT/DE02/00608 WO 20020221
- International Announcement: WO02/081363 WO 20021017
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for manufacturing a semiconductor component, such as, for example, a multilayer semiconductor component including a micromechanical component, such as, for example, a heat transfer sensor having a semiconductor substrate of silicon, and a sensor region. For inexpensive manufacture of a thermal insulation between the semiconductor substrate and the sensor region a porous layer is provided in the semiconductor component.
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