Invention Grant
- Patent Title: Method of manufacture for a trench isolation structure having an implanted buffer layer
- Patent Title (中): 具有植入缓冲层的沟槽隔离结构的制造方法
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Application No.: US10870016Application Date: 2004-06-17
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Publication No.: US07160782B2Publication Date: 2007-01-09
- Inventor: Rick L. Wise , Mark S. Rodder
- Applicant: Rick L. Wise , Mark S. Rodder
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Peter K. McLarty; W. James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/762
- IPC: H01L21/762
Abstract:
The present invention provides a trench isolation structure, a method of manufacture therefor and a method for manufacturing an integrated circuit including the same. The trench isolation structure (130), in one embodiment, includes a trench located within a substrate (110), the trench having an implanted buffer layer (133) located in the sidewalls thereof. The trench isolation structure (130) further includes a barrier layer (135) located over the implanted buffer layer (133), and fill material (138) located over the barrier layer (135) and substantially filling the trench.
Public/Granted literature
- US20050280115A1 Trench isolation structure having an implanted buffer layer and a method of manufacture therefor Public/Granted day:2005-12-22
Information query
IPC分类:
