发明授权
- 专利标题: Thermal inkjet printhead processing with silicon etching
- 专利标题(中): 热喷墨打印头处理与硅蚀刻
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申请号: US09932055申请日: 2001-08-16
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公开(公告)号: US07160806B2公开(公告)日: 2007-01-09
- 发明人: Simon Dodd
- 申请人: Simon Dodd
- 申请人地址: US TX Houston
- 专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人地址: US TX Houston
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; G11B5/127 ; B41J2/16
摘要:
A method of etching the trench portions of a thermal inkjet printhead using a robust mask that precisely defines the area of the substrate surface to be etched and that protects the adjacent drop generator components from damaging exposure to the silicon etchant. The process in accordance with the present invention uses as a mask some of the material that is also used in patterned layers for producing the drop generator components on the substrate. The placement of the mask components on the substrate occurs simultaneously with the production of the drop generator components, thereby minimizing the time and expense of creating the silicon-etchant mask.
公开/授权文献
- US20030036279A1 Thermal inkjet printhead processing with silicon etching 公开/授权日:2003-02-20