发明授权
- 专利标题： CMP of noble metals
- 专利标题（中）： 贵金属的CMP
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申请号： US10610407申请日： 2003-06-30
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公开(公告)号： US07160807B2公开(公告)日： 2007-01-09
- 发明人: Francesco De Rege Thesauro , Vlasta Brusic , Benjamin P. Bayer
- 申请人： Francesco De Rege Thesauro , Vlasta Brusic , Benjamin P. Bayer
- 申请人地址： US IL Aurora
- 专利权人： Cabot Microelectronics Corporation
- 当前专利权人： Cabot Microelectronics Corporation
- 当前专利权人地址： US IL Aurora
- 代理商 Thomas Omholt; Francis Koszyk
- 主分类号： H01L21/461
- IPC分类号： H01L21/461 ; H01L21/302
摘要：
The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (c) a liquid carrier, and (ii) abrading at least a portion of the noble metal layer to polish the substrate. The polishing component is selected from the group consisting of an abrasive, a polishing pad, or a combination thereof, and the oxidizing agent is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodites, periodates, peroxyacetic acid, organo-halo-oxy compounds, salts thereof, and combinations thereof. The chemical-mechanical polishing system has a pH of about 9 or less, and the oxidizing agent does not produce a substantial amount of elemental halogen. The invention also provides a method of polishing a substrate comprising a noble metal layer and a second layer using the aforementioned polishing system that further comprises a stopping compound.
公开/授权文献
- US20040266196A1 CMP of noble metals 公开/授权日：2004-12-30
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