发明授权
US07161169B2 Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain
有权
在双轴压缩应变下，增强了<110> Si中的电子和空穴迁移率
- 专利标题： Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain
- 专利标题（中）： 在双轴压缩应变下，增强了<110> Si中的电子和空穴迁移率
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申请号： US10980220申请日： 2004-11-03
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公开(公告)号： US07161169B2公开(公告)日： 2007-01-09
- 发明人: Victor Chan , Massimo V. Fischetti , John M. Hergenrother , Meikei Leong , Rajesh Rengarajan , Alexander Reznicek , Paul M. Solomon , Chun-yung Sung , Min Yang
- 申请人： Victor Chan , Massimo V. Fischetti , John M. Hergenrother , Meikei Leong , Rajesh Rengarajan , Alexander Reznicek , Paul M. Solomon , Chun-yung Sung , Min Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Ido Tuchman
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L31/0328
摘要：
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing layer; and creating a biaxial strain in the silicon-containing layer.
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