发明授权
- 专利标题: Multilayer chip varistor
- 专利标题(中): 多层芯片压敏电阻
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申请号: US11137584申请日: 2005-05-26
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公开(公告)号: US07167352B2公开(公告)日: 2007-01-23
- 发明人: Dai Matsuoka , Katsunari Moriai , Takehiko Abe , Koichi Ishii
- 申请人: Dai Matsuoka , Katsunari Moriai , Takehiko Abe , Koichi Ishii
- 申请人地址: JP Tokyo
- 专利权人: TDK Corporation
- 当前专利权人: TDK Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff & Berridge, PLC
- 优先权: JPP2004-173050 20040610; JPP2004-173055 20040610
- 主分类号: H01G4/228
- IPC分类号: H01G4/228
摘要:
A multilayer chip varistor comprises a multilayer body and a pair of external electrodes formed on the multilayer body. The multilayer body has a varistor section and a pair of outer layer sections disposed so as to interpose said varistor section. The varistor section comprises a varistor layer developing a voltage nonlinear characteristic and a pair of internal electrodes disposed so as to interpose the varistor layer. The pair of external electrodes are connected to respective electrodes of the pair of internal electrodes. The relative dielectric constant of the outer layer sections is set lower than the relative dielectric constant of the region where the pair of internal electrodes in the varistor layer overlap each other.
公开/授权文献
- US20050276001A1 Multilayer chip varistor 公开/授权日:2005-12-15
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