发明授权
- 专利标题: Laser etching method and apparatus therefor
- 专利标题(中): 激光蚀刻方法及其设备
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申请号: US10943026申请日: 2004-09-17
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公开(公告)号: US07169709B2公开(公告)日: 2007-01-30
- 发明人: Jun Koide
- 申请人: Jun Koide
- 申请人地址: JP Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 代理机构: Fitzpatrick, Cella, Harper & Scinto
- 优先权: JP11-339556 19991130; JP11-339557 19991130; JP11-339558 19991130; JP11-339559 19991130; JP11-339560 19991130
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
The invention provides a laser etching method for optical ablation working by irradiating a work article formed of an inorganic material with a laser light from a laser oscillator capable of emitting in succession light pulses of a large energy density in space and time with a pulse radiation time not exceeding 1 picosecond, wherein, in laser etching of the work article formed of the inorganic material by irradiation thereof with the laser light from the laser oscillator with a predetermined pattern and with a predetermined energy density, there is utilized means for preventing deposition of a work by-product around the etching position.
公开/授权文献
- US20050032380A1 Laser etching method and apparatus therefor 公开/授权日:2005-02-10
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