发明授权
US07170112B2 Graded-base-bandgap bipolar transistor having a constant—bandgap in the base
失效
在基极中具有恒定带隙的梯度基带隙双极晶体管
- 专利标题： Graded-base-bandgap bipolar transistor having a constant—bandgap in the base
- 专利标题（中）： 在基极中具有恒定带隙的梯度基带隙双极晶体管
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申请号： US10283705申请日： 2002-10-30
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公开(公告)号： US07170112B2公开(公告)日： 2007-01-30
- 发明人: Tak Hung Ning
- 申请人： Tak Hung Ning
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Daniel P. Morris
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L31/0328 ; H01L31/0336
摘要：
A bipolar transistor structure and process technology is described incorporating a emitter, a base, and a collector, with most of the intrinsic base adjacent the collector having a graded energy bandgap and a layer of the intrinsic base adjacent the emitter having a substantially constant energy bandgap. The invention has a smaller base transit time than a conventional graded-base-bandgap bipolar transistor.
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