发明授权
US07170147B2 Dissipative isolation frames for active microelectronic devices, and methods of making such dissipative isolation frames
有权
用于有源微电子器件的耗散隔离框架，以及制造这种耗散隔离框架的方法
- 专利标题： Dissipative isolation frames for active microelectronic devices, and methods of making such dissipative isolation frames
- 专利标题（中）： 用于有源微电子器件的耗散隔离框架，以及制造这种耗散隔离框架的方法
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申请号： US10628748申请日： 2003-07-28
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公开(公告)号： US07170147B2公开(公告)日： 2007-01-30
- 发明人: Young-Kai Chen , Vincent Etienne Houtsma , Nils Guenter Weimann
- 申请人： Young-Kai Chen , Vincent Etienne Houtsma , Nils Guenter Weimann
- 申请人地址： US NJ Murray Hill
- 专利权人： Lucent Technologies Inc.
- 当前专利权人： Lucent Technologies Inc.
- 当前专利权人地址： US NJ Murray Hill
- 主分类号： H00L23/552
- IPC分类号： H00L23/552 ; G00R21/26 ; H00B11/02
摘要：
Microelectronic apparatus having protection against high frequency crosstalk radiation, comprising: a planar insulating substrate; an active semiconductor electronic device located over a first region of the insulating substrate; and a doped semiconductor located in a second region of the insulating substrate substantially surrounding the first region. Apparatus further comprising a dissipative conductor overlaying and adjacent to the doped semiconductor. Apparatus additionally comprising metallic test probe contacts making electrical connections with the active semiconductor electronic device. Application of the apparatus to dissipate crosstalk radiation having a center frequency within a range between about 1 gigahertz and about 1,000 gigahertz. Methods for making the apparatus.